When the preferred course oriented regular to the substrate is additional improved, the chance that a (111) face having a minimum surface power faces with the (111) face at a wire cross section is decreased, so that a slit-like disconnection as a result of stressmigration decreased and the interconnection reliability might be improved. The current invention additional relates to an electrode wire structure by which wire reliability is improved, a wire resistance and contact resistance is diminished, a heat radiation effect for wiring is improved, a stress for the semiconductor system is relaxed, and a wiring adhesion is improved. Accordingly, when the crystalline orientation of the wiring in every sample is changed, discount of the stress on the substrate was confirmed by measuring warp of the substrate. The stress migration is a phenomenon during which the switch of Al atom is attributable to a mechanical stress of other material used for LSI.

Taking an example of Al here, the electromigration is an phenomenon the place an electron flowing the interconnection collides with an Al atom so that the Al atom is transferred. So as to solve a problem of the low interconnection reliability, that a crystal orientation of Al interconnection is managed has been examined. The same figures indicate that each of the crystal grain present within the film interacts to one another, thus deteriorating the orientation thereof. Moreover, the additional most well-liked orientation of in Al can not completely management an in-aircraft orientation of crystal grain in a floor, so that the grown Al movie turns into polycrystalline oriented in the preferred route oriented normal to the substrate. The Al which turned a continuous film accordingly is affected each other between neighboring crystal grains, so that the popular course oriented normal to the substrate is deteriorated. In different phrases, there's downside in the standard follow where the preferred path is deteriorated on account of interaction between crystal grains under the typical formation method. An Al crystal has a face centered cubic construction and an surface power thereof is minimal in a (111) face.

In FIG. 29, there is formed a (111) Al floor in parallel to the base face and facet face of the groove, there may be indicated a orientation in a lateral direction of the groove. With reference to FIG. 15C to point out the peak for the Al movie which is formed on the thermal oxide movie having the grooves thereon, the peak is additional narrowed compared to the case where there's formed no groove, so that forming the groove on the surface of the thermal oxide film additional improves the further preferred orientation characteristic. In keeping with still one other aspect of the current invention, there may be offered a way of producing a semiconductor device comprising the steps of: forming a groove having a predetermined pattern form on the floor of a substrate; forming a primary steel thin movie on the substrate; agglomerating the primary steel film by annealing so as to fill the primary metal into at the least a portion of the groove while formation of a local oxide film thereon is suppressed; forming a second metallic skinny movie product of a identical material as the first steel thin film, on the substrate with agglomerated first skinny film; and patterning the first and second skinny films.

With reference to FIG. 9, Al will be filled into a groove having a contact gap or a through hole by agglomeration in a fashion described in the primary embodiment. Moreover, in order to improve the step protection at the time of Al movie formation by sputtering, Aluminum single wire groove shapes resembling in FIG. 42A-42C might serve the aim and be applied to the primary via tenth embodiments. FIGS. 42A-42C show examples of groove shapes so as to improve the step protection. FIGS. 11A by means of 11E present cross sectional views for making a semiconductor machine in keeping with the third embodiment. FIGS. 24A and 24B show cross sectional views exhibiting that the metal skinny film is agglomerated after the metallic skinny film on the groove is selectively eliminated. FIG. 3 exhibits relationship between thickness of Al film and a temperature at which an Al filling within the groove is possible. FIG. 37 exhibits an evaluation result on the reliability of the Al wiring whose width is 1.2 .mu.m and the bending portion in line with the ninth embodiment. FIG. 21 exhibits a correlation between the contact angle of Al and C and the movie thickness. Moreover, when the wiring metallic film located exterior the groove is all removed, the wiring steel film could also be agglomerated.